Optical isolation of optically black pixels in image sensors
US9232162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jun 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Optical isolation is provided for optically black pixels in image sensors. Image sensors, such as backside illumination (BSI) image sensors, may have an active pixel array and an array having optically black pixels. Isolation structures such as a metal wall may be formed in a dielectric stack between an active pixel array and optically black pixels. Patterned shallow trench isolation regions or polysilicon regions may be formed in a substrate between an active pixel array and optically black pixels. An absorption region such as a germanium-doped absorption region may be formed in a substrate between an active pixel array and optically black pixels. Optical isolation and absorption regions may be formed in a ring surrounding an active pixel array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.