Polishing method, polishing apparatus and GaN wafer
US9233449B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Apr 13, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/0056
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.