Large-mesh cell-projection electron-beam lithography method
US9235132B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Oct 26, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.