Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
US9235668B1 · kind B1 · utility
1Cited by
8References
19Claims
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Key dates
| Filing date | Jul 16, 2014 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function fzero(q1) able to be nullified by a correct value of the charge density q1 of the first gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.