Marie-Anne Jaud
5Patents
2h-index
14Co-inventors
44Inventor score
Filing activity: May 29, 2009 → Nov 10, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8183630B2 | Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT | Electricity | 252 | Active |
| US10914703B2 | Computer implemented method for determining intrinsic parameter in a stacked nanowires MOSFET | Emerging Cross-Sectional Technologies | 2 | Active |
| US9235668B1 | Computer implemented method for calculating a charge density at a gate interface of a double gate transistor | Electricity | 1 | Active |
| US10347545B2 | Method for producing on the same transistors substrate having different characteristics | Electricity | 1 | Active |
| US11761920B2 | Concentration estimation method | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.