Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same
US9236263B2 · kind B2 · utility
3Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Jul 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.