Method for producing a semiconductor device

US9236290B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Carsten Ahrens · Birkenfeld, DE
• Rudolf Berger · Munich, DE
• Manfred Frank · Auckland, NZ
• Uwe Hoeckele · Regensburg, DE
• Bernhard Knott · Dresden, DE
• Ulrich Krumbein · Rosenheim, DE
• Wolfgang Lehnert · Lintach, DE
• Berthold Schuderer · Regensburg, DE
• Juergen Wagner · Nittendorf, DE
• Stefan Willkofer · Munich, DE

Key dates

• Filing date: Feb 3, 2012
• Grant date: Jan 12, 2016
• Expiry date: Feb 3, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.