Semiconductor device and manufacturing method thereof
US9236387B2 · kind B2 · utility
1Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2014 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.