Patent · US Active

Semiconductor device with integrated breakdown protection

US9236472B2 · kind B2 · utility

5Cited by

16References

19Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Weize Chen · Phoenix, US
Hubert M. Bode · Haar, DE
Richard J. De Souza · Tempe, US
Patrice M. Parris · Phoenix, US

Key dates

Filing date	Apr 17, 2012
Grant date	Jan 12, 2016
Priority date	—
Expiry date	May 24, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/378
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area and spaced from the body region to define a conduction path of the device, the drain region having the second conductivity type. The device isolating region and the body region are spaced from one another to establish a first breakdown voltage lower than a second breakdown voltage in the conduction path.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.