CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9238753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Apr 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.