Closed-space annealing process for production of CIGS thin-films
US9238861B2 · kind B2 · utility
3Cited by
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17Claims
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Key dates
| Filing date | May 9, 2012 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.