Nonvolatile memory devices and driving methods thereof
US9240239B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2015 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.