Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
US9240319B2 · kind B2 · utility
5Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.