Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants
US9240322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2011 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.