Method for fabricating capacitor of semiconductor device
US9240442B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.