Methods of forming non-oxygen containing silicon-based films
US9243324B2 · kind B2 · utility
14Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.