Method for producing thick film photoresist pattern
US9244354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0048
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.