Compositions and processes for immersion lithography
US9244355B2 · kind B2 · utility
1Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.