Patent · US Active

One-time programmable memory cell and circuit

US9245647B2 · kind B2 · utility

2Cited by

5References

19Claims

0Family size

Assignee

Chengdu Monolithic Power Systems Co., Ltd. · CN

Inventors

Eric Braun · Mountain View, US
Da Chen · Sichuan, CN

Key dates

Filing date	Jun 30, 2014
Grant date	Jan 26, 2016
Priority date	—
Expiry date	Jun 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10B20/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.