Deep collector vertical bipolar transistor with enhanced gain
US9245755B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Dec 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.