Semiconductor device and method for fabricating the same
US9245756B2 · kind B2 · utility
1Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.