Semiconductor element
US9245838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2015 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jan 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer device has a resin layer, a semiconductor device positioned in the resin layer and including an electronic component and a passivation layer having an opening exposing an electrode of the electronic component, an intermediate layer including metal layers and formed in the opening of the passivation layer such that the intermediate layer is connected to the electrode of the electronic component, and a buildup layer formed on the resin layer and including an insulating layer and a via conductor formed in the insulating layer such that the via conductor is connected to the intermediate layer. The resin layer includes one or more resin material selected from the group consisting of a thermosetting resin material and a thermoplastic resin material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.