Patent · US Active

Semiconductor device with internal substrate contact and method of production

US9245843B2 · kind B2 · utility

0Cited by

0References

10Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Jordi Teva · Eindhoven, NL
Cathal Cassidy · Okinawa, JP
Günther Koppitsch · Lieboch, AT

Key dates

Filing date	Jan 16, 2013
Grant date	Jan 26, 2016
Priority date	—
Expiry date	Jan 16, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/02372
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metallization (12) arranged in the contact hole, so that the contact metallization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.