Reverse polarity protection for n-substrate high-side switches
US9245888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Nov 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (VS) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.