High electron mobility transistors and methods of manufacturing the same
US9245947B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.