Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
US9245991B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Nov 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a channel layer over the substrate, an active layer over the channel layer, and a barrier structure between the substrate and the channel layer. The active layer is configured to cause a two dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The barrier structure is configured to block diffusion of at least one of a material of the substrate or a dopant toward the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.