Semiconductor device
US9246001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2015 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and extends in a first direction with a first insulating film around the fin-shaped semiconductor layer. A pillar-shaped semiconductor layer resides on the fin-shaped semiconductor layer. A width of the pillar-shaped semiconductor layer, perpendicular to the first direction is equal to a width of the fin-shaped semiconductor layer perpendicular to the first direction. A gate insulating film is around the pillar-shaped semiconductor layer and a metal gate electrode is around the gate insulating film. A metal gate line extends in a second direction perpendicular to the first direction of the fin-shaped semiconductor layer and is connected to the metal gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.