Structure and method for semiconductor device
US9246002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer. The impurity diffusion stop layer substantially prevents impurities of the substrate and the source and drain regions from diffusing into the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.