Chen-Chieh Chiang
20Patents
3h-index
30Co-inventors
59Inventor score
Filing activity: Dec 16, 2011 → Apr 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9246002B2 | Structure and method for semiconductor device | Electricity | 12 | Active |
| US8586486B2 | Method for forming semiconductor device | Electricity | 4 | Active |
| US9721883B1 | Integrated circuit and manufacturing method thereof | Electricity | 3 | Active |
| US9773911B2 | Fin field effect transistor and fabricating method thereof | Electricity | 2 | Active |
| US9698214B1 | Capacitor structure of integrated circuit chip and method of fabricating the same | Electricity | 1 | Active |
| US10510671B2 | Method for forming semiconductor device structure with conductive line | Electricity | 1 | Active |
| US12269135B2 | Work piece holder and method of transferring a work piece | Electricity | 0 | Active |
| US12424499B2 | Manufacturing method of semiconductor structure and semiconductor structure thereof | Electricity | 0 | Active |
| US9859129B2 | Semiconductor device and manufacturing method of the same | Electricity | 0 | Active |
| US12080751B2 | Semiconductor device structure and methods of forming the same | Electricity | 0 | Active |
| US9768073B1 | Semiconductor device having dual channels, complementary semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US12341060B2 | Method for manufacturing through vias using amorphization to adjust etching rate | Electricity | 0 | Active |
| US12342564B2 | Semiconductor structure and forming method thereof | Electricity | 0 | Active |
| US9893150B2 | Structure and method for semiconductor device | Electricity | 0 | Active |
| US12310092B2 | Multi-functional transistors in semiconductor devices | Electricity | 0 | Active |
| US10158023B2 | Fabricating method of fin field effect transistor | Electricity | 0 | Active |
| US10879186B1 | Method for forming semiconductor device structure with conductive line | Electricity | 0 | Active |
| US8900886B2 | System and method of monitoring and controlling atomic layer deposition of tungsten | Electricity | 0 | Active |
| US10770401B2 | Method for forming semiconductor device structure with conductive line | Electricity | 0 | Active |
| US10109739B2 | Fin field effect transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.