Silicon carbide semiconductor device
US9246016B1 · kind B1 · utility
7Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: a substrate, an n-drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.