Packaging structure of light emitting diode and method of manufacturing the same
US9246052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure has an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filled with conductive metal. Additionally, a n-type layer, an active layer, a p-type layer, an insulating layer and a p-type electrode are formed on the insulating substrate. The structure further may include a n-type electrode provided on a side of the upper surface of the n-type layer; a first back electrode provided at one side of the back surface of the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate; and an optical element packaged on the base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.