RRAM cell including V-shaped structure

US9246084B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Hsing-Chih Lin · Tainan, TW

Key dates

• Filing date: Jan 23, 2014
• Grant date: Jan 26, 2016
• Expiry date: Jan 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/111

Abstract

Embodiments of a resistive random access memory (RRAM) cell structure are provided. The RRAM cell structure includes a first electrode over a substrate. The RRAM cell structure also includes a resistance variable layer over the first electrode. The resistance variable layer has a first portion in a V-shape. The RRAM cell structure further includes a second electrode over the resistance variable layer.