Method for preparing a thin film of thiospinels
US9249495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/5806
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.