Benoit Corraze
4Patents
1h-index
11Co-inventors
37Inventor score
Filing activity: Mar 12, 2008 → Apr 24, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8305794B2 | Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM4x8 type with an electronic data rewritable non volatile memory, and corresponding material | Physics | 3 | Active |
| US10867237B2 | Single-component artificial neuron based on Mott insulators, network of artificial neurons and corresponding manufacturing method | Electricity | 1 | Active |
| US9249495B2 | Method for preparing a thin film of thiospinels | Chemistry; Metallurgy | 0 | Active |
| US9837607B2 | Use of centrosymmetric Mott insulators in a resistive switched memory for storing data | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.