Graphene sensor
US9250204B2 · kind B2 · utility
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4References
5Claims
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Assignee
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Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Jan 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.