Resist composition and patterning process
US9250518B2 · kind B2 · utility
29Cited by
13References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist film containing a sulfonium or iodonium salt of carboxylic acid having an amino group has a high dissolution contrast and offers improved resolution, wide focus margin and minimal LWR when used as a positive resist film adapted for alkaline development and a negative resist film adapted for organic solvent development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.