Lithography method with combined optimization of radiated energy and design geometry
US9250540B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Oct 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.