Method for manufacturing a composite wafer having a graphite core

US9252045B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rudolf Berger · Munich, DE
• Hermann Gruber · Leverkusen, DE
• Wolfgang Lehnert · Lintach, DE
• Guenther Ruhl · Regensburg, DE
• Raimund Foerg · Straubing, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Feb 26, 2013
• Grant date: Feb 2, 2016
• Expiry date: Feb 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02628
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.