Method to improve semiconductor surfaces and polishing
US9252050B2 · kind B2 · utility
0Cited by
10References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Apr 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76892
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.