Ambient infrared detection in solid state sensors
US9252176B2 · kind B2 · utility
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16References
22Claims
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Key dates
| Filing date | Oct 25, 2013 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Jul 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.