Partially-blocked well implant to improve diode ideality with SiGe anode
US9252234B2 · kind B2 · utility
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8References
17Claims
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Key dates
| Filing date | Sep 6, 2012 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.