Semiconductor device

US9252276B2 · kind B2 · utility

Assignee

• UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. · SG

Inventors

• Fujio Masuoka · Yokohama, JP
• Hiroki Nakamura · Tokyo, JP

Key dates

• Filing date: Jan 28, 2015
• Grant date: Feb 2, 2016
• Expiry date: Jan 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/665

Abstract

A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width of the fin-shaped silicon layer. Diffusion layers reside in upper portions of the pillar-shaped silicon layer and fin-shaped silicon layer and in a lower portion of the pillar-shaped silicon layer to form. A gate insulating film and a metal gate electrode are around the pillar-shaped silicon layer and a metal gate line extends in a direction perpendicular to the fin-shaped silicon layer and is connected to the metal gate electrode. A contact resides on the metal gate line and a nitride film is on an entire top surface of the metal gate electrode and the metal gate line, except for the bottom of the contact.