Three-dimensional gallium nitride (GaN) pillar structure light emitting diode (LED)
US9252328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2015 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Mar 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.