CMOS integrated moving-gate transducer with silicon as a functional layer

US9255000B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ando Feyh · Palo Alto, US
• Po-Jui Chen · Taichung, TW
• Markus Ulm · Weilmünster, DE

Key dates

• Filing date: Dec 17, 2013
• Grant date: Feb 9, 2016
• Expiry date: Dec 17, 2033

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0771
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.