Patent · US Active

Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles

US9255214B2 · kind B2 · utility

1Cited by

7References

19Claims

0Family size

Assignee

BASF SE

Inventors

Michael Lauter · Mannheim, DE
Vijay Immanuel Raman · Mannheim, DE
Yuzhuo Li
Shyam Sundar Venkataraman · Pingzhen District, TW
Daniel Kwo-Hung Shen · Taichung, TW

Key dates

Filing date	Nov 10, 2010
Grant date	Feb 9, 2016
Priority date	—
Expiry date	Oct 31, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31053
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.