Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
US9257270B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Feb 12, 2013 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Jul 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.