Method of etching silicon oxide film
US9257301B2 · kind B2 · utility
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4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.