Method for manufacturing through substrate via (TSV), structure and control method of TSV capacitance
US9257322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2012 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a through substrate via (TSV) structure, a TSV structure, and a control method of a TSV capacitance are provided. The method for manufacturing the TSV structure includes: providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein the opening is located differently the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the opening and on the insulating layer of the first surface; and filling a conductive material into the opening, wherein the opening is used to form at least one via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.