Method of fabricating bump structure and bump structure
US9257401B2 · kind B2 · utility
8Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2015 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.