Magnetic memory, method of manufacturing the same, and method of driving the same
US9257483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2011 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Feb 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.